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| ASDL-4670 High Performance T- (3mm) AlGaAs/GaAs Infrared (940nm) Lamp Data Sheet Description ASDL-4670 is a high performance Infrared emitter that utilizes AlGaAs on GaAs LED technology. It is optimized for efficiency at emission wavelength of 940nm and is designed for application that requires high radiant intensity, low forward voltage at wide viewing angle. The emitter is encapsulated in clear T-1 (3mm) package. Features * * * * * T-1 Package 940nm wavelength Wide Viewing Angle Low Forward Voltage Lead Free and ROHS Compliant * Available in Tape & Reel Applications * * * * * * * IR Remote Control for Consumer Device IR Remote Control for Industrial Equipment Portable Infrared Instruments Wireless Headset Infrared Illuminator Security Camera Photo-Interrupters Reflective Applications Order Information Part Number ASDL-4670-C ASDL-4670-C3 Lead Form Straight Color Clear Packaging Tape & Reel Bulk Shipping Option 4000pcs 8000pcs / Carton Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010") unless otherwise noted 3. Protruded resin under flange is 1.5mm (.059") max 4. Lead spacing is measured where leads emerge from package 5. Specifications are subject to change without notice for performance improvement Absolute Maximum Ratings at 25C Parameter Peak Forward Current Continuous Forward Current Power Dissipation Reverse Voltage Operating Temperature Storage Temperature LED Junction Temperature Lead Soldering Temperature Symbol IFPK IFDC PDISS VR TO TS TJ -40 -55 Min. Max 60 00 5 85 00 0 60C for 5 sec Unit A mA mW V C C C Reference 300pps Electrical Characteristics at 25C Parameter Forward Voltage Reverse Voltage Thermal Resistance, Junction to Ambient Symbol VF VR Rqja 5 350 Min. Typ. . Max. .6 Unit V V C/W Condition IFDC=50mA IR=00uA Optical Characteristics at 25C Parameter Radiant On-Axis Intensity Viewing Angle Peak wavelength Spectral Width Optical Rise Time Symbol IE q/ PK tr Min. .7 Typ. 60 940 50 Max. 7.67 Unit mW/Sr deg nm nm us IFDC = 0mA IFDC = 0mA IFPK=00mA Duty Factor=50% Pulse Width=0us IFPK=00mA Duty Factor=50% Pulse Width=0us Condition IFDC=0mA Optical Fall Time tf us 3 Typical Electrical/Optical Characteristics Curves (TA=25C unless otherwise indicated) 1.0 60 Relative Radiant Intensity Forward Current IF (mA) 940 Wavelength (nm) 1040 50 40 30 20 10 0 -40 -20 0 20 40 60 80 100 0.5 0 840 Ambient Temperature Ta ( o C) Figure 2. FORWARD CURRENT VS. AMBIENT TEMPERATURE 1.2 Figure 1. SPECTRAL DISTRIBUTION 50 Output Power Relative To Value at IF=20mA 0 1.6 2.0 2.8 Forward Current (mA) 40 30 20 10 0 1.0 0.8 0.6 0.4 0.2 0 -20 0 20 40 60 o 1.2 2.4 80 Forward Voltage (V) Figure 3. FORWARD CURRENT VS. FORWARD VOLTAGE Ambient Temperature Ta ( C) Figure 4. RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE 0 o 10 o 20 o 30 o 5.0 Output Power Relative To Value at IF=20mA 4.0 3.0 2.0 1.0 0 Relative Radiant Intensity 40 1.0 0.9 0.8 0.7 50 60 o o o o 70 o 80 o 90 0.5 0.3 0.1 0.2 0.4 0.6 0 20 40 60 80 100 Foward Current (mA) Figure 5. RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT Figure 6. RADIATION DIAGRAM For company and product information, please go to our web site: WWW.liteon.com or http://optodatabook.liteon.com/databook/databook.aspx Data subject to change. Copyright (c) 007 Lite-On Technology Corporation. All rights reserved. |
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